2008 International Workshop on

DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY

(November 5-7, 2008, Tokyo Institute of Technology, Tokyo, Japan)

Sponsored by The Japan Society of Applied Physics, Japan
In Cooperation with JSAP Thin Film and Surface Physics Division, JSAP Silicon Technology Division, Association of Super-Advanced Electronics Technologies (ASET), Tokyo Tech G-COE "Photonics-Integrated Core Electronics"

Update Info.
Advance program has been released(2008.9.12).
Resistration has been started(2008.8.19).
Submission deadline has been EXTENDED to August 8, 2008
Web site of Paper Submission has been open(2008.7.7)

SCOPE:
The 2008 International Workshop on “Dielectric Thin Films for Future ULSI Devices: Science and Technology” (IWDTF-08) will be held at Tokyo Institute of Technology, Meguro-ku, Tokyo, Japan, on November 5-7, 2008. The IWDTF started in 1999, based on a domestic annual workshop on ultrathin silicon dioxide films. In succession to the second (IWDTF-04, Tokyo) and the third (IWDTF-06, Kawasaki) workshops, the IWDTF-08 will focus on the science and technologies of gate dielectric films for MOS devices, such as ultrathin SiO2, SiON, high-k gate dielectrics, and ferroelectric films. The topics on other technologies involved in the advanced gate stacks, which include metal gate electrodes and high-mobility channel materials, will also be discussed. The IWDTF will provide a great opportunity for information exchange and discussions at forefront of the researches on future ULSI. The papers on both experimental and theoretical studies, for the deep understanding of the properties of gate dielectric films and their interfaces, are welcomed. The workshop will consist of invited and contributed talks, and poster presentations. Selected topics of current interests will be reviewed by several invited talks.

Papers are solicited in, but not limited to, the following area:

Advance program

Workshop site

Ookayama campus, Tokyo Institute of Technology, Tokyo, Japan[Web]
Workshop site (West Bldg. 9, Digital Audio-visual Lecture Theater)[Web]

Recommended Hotel Information(PDF)

Call for papers(PDF file)


Invited Keynote Speakers (tentative) :
Hisatsune Watanabe (Selete) and Serge Biesemans (IMEC).

Workshop Language:
The official language of the workshop is English.

PRESENTATION IN CONFERENCE(for authors)
Presentation Tools
Submission of poster short presentation files iDeadline Oct. 28)

Submission of Papers:
Paper acceptance is based on abstract submission. The work must be original and unpublished. Prospective authors should submit abstract(s) (only in PDF file), two pages in length including all figures and tables, by Aug 8, 2008(EXTENDED) to the following submission World Wide Web site.

The two-page abstracts must be written in English and typed in a area of 8.5 x 11 inches or A4 size. The first page must be headed by the title of the paper, author(s), affiliation(s), address, telephone number, fax number, e-mail address of the corresponding author. The text of the abstract must clearly and concisely state the specific results of the work and its originality. Please refer to the sample abstract(PDF file) for detail format information, If you use, please download the abstract template(Microsoft Word) and prepare your abstract following the instructions.

The decision will be notified by e-mail until the beginning of September 2008. All contributors will be requested to give either an oral presentation conforming to 20 minutes format or poster presentation. Please note that no submission by Fax will be accepted.

Submission of Papers
Download the abstract sample as PDF file.
Download the abstract template as Word doc.

Submission of Full-Papers to the Special Issue of JJAP:
Authors of papers accepted in IWDTF-08 are encouraged to submit the original and significant part of the papers to the Special Issue of the Japanese Journal of Applied Physics (JJAP), which will be published in May 2009. The deadline of the paper submission is October 31, 2008. Please refer to the IWDTF-08 website for the detailed information. Those who wish to submit a paper to the special issue should follow the instructions for preparation of manuscript for JJAP. Please note that the manuscript will be published after the usual review process in JJAP. The special issue is not just proceedings of IWDTF-08.

See the instruction web site

Registration:
Registration for the IWDTF-08 should be made on the workshop web site.
Pre-resistration is accepted only through the workshop web site before October 10, 2008.

RESISTRATION

Participants Pre-registration(On or before October 10, 2008) Registration(After October 10, 2008) Banquet
Regular 30,000 Jpn. Yen 35,000 Jpn. Yen 5,000 Jpn. Yen
JSAP or IEEE member 25,000 Jpn. Yen 30,000 Jpn. Yen 5,000 Jpn. Yen
Student 10,000 Jpn. Yen 10,000 Jpn. Yen 5,000 Jpn. Yen

Payment should be made in Japanese yen by bank transfer to the following;
A/C Name: 2008IWDTF SHUN-ICHIRO OHMI, A/C No.: 1683758
Bank Name : MIZUHO BANK, LTD. (SWIFT BIC : MHBKJPJT)
Branch Name : Nagatsuta Branch
4-1-23 Nagatsuta, Midori-ku, Yokohama, 226-0027, Japan

For on-site registration, credit card of Master, VISA and AMEX are also acceptable. *No cancellation will be accepted after October 15, 2008. The registration fee includes admission to the workshop sessions, a copy of abstract book and a CD-ROM. The banquet will be held in the evening on November 5, 2008.

Organizing Committee
Chairperson: S. Zaima (Nagoya Univ.)
Members: K. Yamabe (Univ. of Tsukuba), T. Masuhara (ASET), Y. Nishioka (Nihon Univ.), K. Maeguchi (SIRIJ),
K. Yamada (Waseda Univ.), A. Toriumi (Univ. of Tokyo)
Steering Committee:
Chairperson: Y. Nara (Selete)
Vice Chairperson: S. Ohmi (Tokyo Tech)
Members: K. Kita (Univ. of Tokyo), S. Miyazaki (Hiroshima Univ.), N. Miyata (AIST), A. Sakai (Osaka Univ.), H. Watanabe (Osaka Univ.), T. Watanabe (Waseda Univ.), C. Kaneta (Fujitsu Labs.)
Program Committee:
Chairperson: J. Yugami (Renesas)
Vice Chairperson: Y. Takakuwa (Tohoku Univ.)
Members: Y. Akasaka (Tokyo Electron), T. Chikyo (NIMS), K. Eriguchi (Kyoto Univ.), S. Hayashi (Matsushita Electric), T. Hamada (Univ. of Tokyo), K. Hirose (ISAS), S. Horii (Hitachi Kokusai Electric), S. Inumiya (Toshiba), H. Kageshima (NTT), K. Kakushima (Tokyo Tech), Y. Kamakura (Osaka Univ.), K. Kobayashi (Tokai Univ.), T. Matsuki (Selete), S. Migita (AIST), K. Muraoka (Toshiba), T. Nabatame (Selete), Y. Nishida (Renesas), A. Nishiyama (Toshiba), M. Niwa (Matsushita Electric), H. Nohira (Musashi Inst. Technol.), K. Torii (Hitachi), S. Samukawa (Tohoku Univ.), K. Sasakawa (KOBELCO), Y. Shimamoto (Hitachi), K. Tsutsui (Tokyo Tech), K. Shiraishi (Univ. of Tsukuba), A. Tachibana (Kyoto Univ.), M. Takayanagi (Toshiba), S. Tsujikawa (Sony), T. Tatsumi (Canon Anelva), E. Tokumitsu (Tokyo Tech), K. Uchida (Tokyo Tech), T. Yamamoto (Toray), Y. Tsuchiya (Univ. of Southampton)

Previous Workshop

IWDTF-04
IWDTF-06

Important Dates

Abstract Deadline:

EXTENDED to Aug 8, 2008

Notification of Acceptance:

September 5, 2008

Pre-Registration Deadline:

October 10, 2008

Workshop:

November 5-7, 2008