2004 International Workshop on Dielectric Thin Films for Future ULSI Devices

Program


Papers (Oral)


<+>: Invited paper
Wednesday May 26, 2004

12:40-12:50 Openning Address
Keynote Speeches (12:50-14:30)
Chairpersons: S. Zaima (Nagoya Univ), S. Miyazaki (Hiroshima Univ.)
12:50-13:40 <+>
title Future Trends in Microelectronics
author(s) Yoshio Nishi(Stanford Univ., USA)
13:40-14:30 <+>
title Materials Engineering for High-k Gate Stack Technology
author(s) Akira Toriumi(Univ. of Tokyo)
Coffee Break (20min.)
Session 1 (14:50-17:10)
Chairpersons: Y. Tsunashima (Toshiba Corp.), M. M. Heyns (IMEC)
14:50-15:20 <+>
title Scaling of Hf-based High-k Dielectrics
author(s) M. M. Heyns, S. Beckx, M. Caymax(IMEC, Belgium), J. Chen(TI assignee at IMEC), M. Claes(IMEC, Belgium), B. Coenegrachts(LAM Research corporation assignee at IMEC), S. De Gendt, R. Degraeve, A. Delabie, W. Deweerd, G. Groeseneken(IMEC, Belgium), S. Hayashi(Matsushita assignee at IMEC), K. Henson(IMEC, Belgium), J. Hooker(Philips research leuven), M. Houssa, T. Kauerauf(IMEC, Belgium), A. Kerber(Infineon assignee at IMEC), D. H. Kwak(Samsung assignee at IMEC), R. Lander(Philips research leuven), G. Lujan(IMEC, Belgium), M. Niwa(Matsushita assignee at IMEC), L. Pantisano, R. Puurunen, L-A. Ragnarson, E. Rohr, T. Schram(IMEC, Belgium), Y. Shimamoto(Renesas/Hitachi assignee at IMEC), W. Tsai(INTEL assignee at IMEC), S. Van Elshocht(IMEC, Belgium), J. Vertommen(LAM Research corporation assignee at IMEC), W. Vandervorst, S. Kubicek(IMEC, Belgium)
15:20-15:50 <+>
title Beyond Hf-based High-k Dielectrics: How do we get to 0.5nm?
author(s) A. Kingon(North Carolina St. Univ., USA)
15:50-16:10
title Hf-Profile Engineered HfSiON Gate Dielectrics with Poly-Si Gate
author(s) Masao Inoue, Jiro Yugami, Masaharu Mizutani(Renesas Technology Corp./Wafer Process Engineering Development Div.), Koji Nomura(Wafer Process Engineering Dept.(1), Renesas Semiconductor Engineering Corp.), Junichi Tsuchimoto, Yoshikazu Ohno, Masahiro Yoneda(Renesas Technology Corp./Wafer Process Engineering Development Div.)
16:10-16:30
title The Threshold Voltage Control Method for Poly-Si Gated High-k MOSFETs with HfO2 and In-situ Metal-oxynitride Gate Stack
author(s) Tsunehisa SAKODA, Masaomi YAMAGUCHI, Hiroshi MINAKATA, Makoto NAKAMURA, Masatoshi FUKUDA, Yoshihiro SUGIYAMA, Yasuo NARA(Fujitsu Laboratories Ltd.)
16:30-16:50
title Origin of Flatband Voltage Shift in Poly-Si /Hf-based High-k Gate Dielectrics and Vfb Dependence on Gate Stack Structure
author(s) Makoto Miyamura, Koji Masuzaki, Heiji Watanabe, Nobuyuki Ikarashi, Toru Tatsumi(System Devices Research Laboratories, NEC Corp.)
16:50-17:10
title Performance Improvements of HfOx(N) and HfAlOx(N) MOSFETs by Post Nitrogen Bond Rearrangement Process
author(s) K. Iwamoto(MIRAI-ASET), T. Nishimura(MIRAI-ASRC), K. Tominaga(MIRAI-ASET), W. Mizubayashi(MIRAI-ASRC), H. Hisamatsu, N. Mise, K. Yamamoto, M. Kadoshima, N. Yasuda(MIRAI-ASET), H. Ota, T. Horikawa(MIRAI-ASRC), T. Nabatame(MIRAI-ASET), A. Toriumi(MIRAI-ASRC, Department of Materials Science, The University of Tokyo)
Intermission (10min.)
Announcement (17:20-17:35)

17:20-17:35
title Promotion of Nanotechnology Researchers Network (NANONET) Project
author(s) Hidetoshi Nakamura(Nanotechnology Researchers Network Center of Japan)
Special Lectures (17:35-18:35)
Chairpersons: H. Nohira (Musashi Inst. of Tech.), A. Sakai (Nagoya Univ.)
17:35-18:05 <+>
title Special Lecture(1)
author(s) Takeo Hattori (Musashi Inst. of Tech.)
18:05-18:35 <+>
title Special Lecture(2)
author(s) Yukio Yasuda(Kouchi Univ. of Tech.)

Thursday May 27, 2004

Session 2 (9:00-10:30)
Chairpersons: Y. Sugita (Fujitsu Labs.), G. Lucovsky (NCSU)
9:00-9:30 <+>
title Bond-strain and Defects at Si-SiO2 and Internal Dielectric Interfaces in High-k Gate Stacks
author(s) Gerald Lucovsky, James C. Phillips(North Carolina State University)
9:30-9:50
title Structural and Electrical Properties of Praseodymium Silicate Ultrathin Gate Dielectrics Grown by MOCVD
author(s) Hirotsugu Fujita(Research Center for Quantum Effect Electronics, Tokyo Institute of Technology and Department of Electrical and Electronic Engineering, Musashi Institute of Technology), Yoshishige Tsuchiya(Research Center for Quantum Effect Electronics, Tokyo Institute of Technology), Hiroshi Mizuta(Department of Physical Electronics, Tokyo Institute of Technology), Hiroshi Nohira, Takeo Hattori(Department of Electrical and Electronic Engineering, Musashi Institute of Technology), Shunri Oda(Research Center for Quantum Effect Electronics and Department of Physical Electronics, Tokyo Institute of Technology)
9:50-10:10
title Physical and Electrical Properties of HfAlOx Films Prepared by Atomic Layer Deposition Using NH3/Ar Plasma
author(s) Takaaki Kawahara, Kazuyoshi Torii, Hiroshi Ohji, Woosik Kim, Riichiro Mitsuhashi, Akiyoshi Muto, Hiroyuki Ito, Hiroshi Kitajima(Semiconductor Leading Edge Technologies, Inc.)
10:10-10:30
title Determination of Band Alignment of HfSiON/Si Structures Using Electron Spectroscopy
author(s) Yuuichi Kamimuta, Masahiro Koike, Tsunehiro Ino, Masamichi Suzuki, Masato Koyama(Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation), Yoshitaka Tsunashima(Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation), Akira Nishiyama(Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation)
Coffee Break (20min.)
Session 3 (10:50-12:00)
Chairpersons: K. Torii (Selete), D.L. Kwong (Univ. of Texas)
10:50-11:20 <+>
title Charge Trapping in High-K Gate Stack and and Its Impact on MOSFET Lifetime
author(s) D. L. Kwong(Univ. of Texas at Austin)
11:20-11:40
title Interfacial Layer-Induced Mobility Degradation in High-k Transistors
author(s) Gennadi Bersuker, Peter M. Zeitzoff, J. Barnett(International SEMATECH), N. Moumen(IBM), S. Stemmer, M. Agustin(University of California Santa Barbara), B. Foran, C. D. Young(International SEMATECH), J. Peterson(Intel), P. Lysaght(International SEMATECH), B. H. Lee(IBM), G. A. Brown, H. R. Huff(International SEMATECH)
11:40-12:00
title Suppresion of the Transient Current of MOS Consisting of HfAlOx as Gate Dielectrics Studied by Positron Annihilation
author(s) A. Uedono, M. Goto, K. Higuchi(Institute of Applied Physics, University of Tsukuba), K. Shiraishi(Institute of Physics, University of Tsukuba), K. Yamabe(Institute of Applied Physics, University of Tsukuba), H. Kitajima, R. Mitsuhashi, A. Horiuchi, K. Torii, T. Arikado(Semiconductor Leading Edge Technologies, Inc.), R. Suzuki, T. Ohdaira(National Institute of Advanced Industrial Science and Technology), K. Yamada(Nano Technology Research Laboratory, Waseda University)
Lunch Time (12:00-13:10)
Session 4 (13:10-15:40)
Chairpersons: H. Watanabe (Osaka Univ.), D. Muller (Cornell Univ.)
13:10-13:40 <+>
title Imaging the Atomic-Scale Chemistry and Electronic Structure inside Nanodevices
author(s) David A. Muller(Cornell University)
13:40-14:00
title Correlation between STM-Induced Spots and Fixed Positiove Charges in Thin HfO2 Films
author(s) Noriyuki Miyata, Hiroyuki Ota(MIRAI, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST)), Masakazu Ichikawa(The University of Tokyo)
14:00-14:20
title Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH3-nitrided Si(100)
author(s) Hiroshi Nakagawa, Akio Ohta, Fumito Takeno, Satoru Nagamachi, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki(Graduate School of Advanced Sciences of Matter, Hiroshima University)
14:20-14:40
title Rate-limiting Reaction of Growth and Decomposition of Very Thin Oxide on Si(001) Surface
author(s) Syuichi Ogawa, Yuji Takakuwa(IMRAM, Tohoku Univ.)
14:40-15:00
title Growth Process and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation Process
author(s) Hiroki Kondo, Keigo Kawaai, Akira Sakai, Kayoko Miyazaki(Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University), Shigeaki Zaima(Center for Cooperative Research in Advanced Science & Technology, Nagoya University), Yukio Yasuda(Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University)
15:00-15:20
title The Effect of the Si/SiO2 Interface on Boron Diffusion in SiO2
author(s) Shigeto Fukatsu, Kohei M. Itoh(Department of Applied Physics and Physico-Informatics and CREST-JST, Keio University ), Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi(NTT Basic Research Laboratories, NTT Corporation), Kenji Shiraishi(Institute of Physics, University of Tsukuba)
15:20-15:40
title Angle-Resolved X-ray Photoelectron Spectroscopy Studies on Compositional and Structural Transition Layers at SiO2/Si Interfaces
author(s) Hiroshi Nohira , Hideyuki Okamoto, Tetsushi Yoshida, Masatoshi Shioji(Musashi Institute of Technology), Kazufumi Azuma, Yukihiko Nakata(Advanced LCD Technolgies Development Center Co. Ltd.), Eiji Ikenaga, Keisuke Kobayashi(JASRI/SPring-8), Yasutaka Takata, Shigi Shin.(RIKEN/SPring-8), Takeo Hattori(Musashi Institute of Technology)
Intermission (10min.)
15:50-17:50 Poster Session
18:00-19:30 Banquet

Friday May 28, 2004

Session 5 (9:00-10:30)
Chairpersons: K. Shiraishi (Univ. of Tsukuba), A. Pasquarello (IRRMA)
9:00-9:30 <+>
title Atomic-Scale Modelling of the Si(100)-SiO2 Interface: Dielectric Discontinuity
author(s) Feliciano Giustino, Angelo Bongiorno, Alfredo Pasquarello(Institut de Theorie des Phenomenes Physisques(ITP),Ecole Polytechnique Federale de Lausanne(EPFL),Institut Romand de Recherche Numerique en Physique des Materiaux(IRRMA))
9:30-9:50
title First-principles Analyses of O2 Molecules around Ultrathin SiO2/Si(100) Interface
author(s) Toru Akiyama(Department of Physics Engineering, Mie University), Hiroyuki Kageshima(NTT Basic Research Laboratories, NTT Corporation), Tomonori Ito(Department of Physics Engineering, Mie University)
9:50-10:10
title Theoretical Study of Excess Si Emitted from Si-Oxide/Si Interfaces
author(s) Hiroyuki Kageshima(NTT Basic Research Labs., NTT Corp. ), Masashi Uematsu(NTT Basic Research Labs., NTT Corp.), Kazuto Akagi(Faculty of Science, Univ. of Tokyo), Shinji Tsuneyuki(Faculty of Scince, Univ. of Tokyo), Toru Akiyama(Dept. of Physics Engineering, Mie Univ.), Kenji Shiraishi(Faculty of Physics, Univ. of Tsukuba)
10:10-10:30
title Residual Order within Thermally Grown SiO2 on Si(113) Substrate
author(s) Kosuke Tatsumura, Takanobu Watanabe, Iwao Ohdomari(School of Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan), Toyohiro Chikyow(National Institute for Material Science, Sengen 1-2-1 Tsukuba-shi, Ibaraki 305-0047, Japan), Takayoshi Shimura(Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita-shi, Osaka 565-0871, Japan), Masataka Umeno(Department of Management Science, Faculty of Engineering, Fukui University of Technology, 3-6-1 Gakuen, Fukui-shi, Fukui 910-8505, Japan)
Coffee Break (20min.)
Session 6 (10:50-12:00)
Chairpersons: E. Tokumitsu (Tokyo Inst. Tech.), S. Streiffer (Argone National Lab.)
10:50-11:20 <+>
title Beyond High-K: Ferroelectric Ultrathin Films and Nanostructures
author(s) S. Streiffer, G.B. Stephenson, D.D. Fong, J.A. Eastman(Materials Science Division, Argonne National Laboratory, USA), Carol Thompson(Dept. of Physics, Northern Illinois University, Materials Science Division, Argonne National Laboratory, USA), M. Zurbuchen(Materials Science Division, Argonne National Laboratory, USA), M. Biegalski(Dept. of Materials Science & Eng., Penn State University), O. Auciello, P.H. Fuoss(Materials Science Division, Argonne National Laboratory, USA), D. M. Kim, K. J. Choi, C. B. Eom(Dept. of Materials Science & Eng., University of Wisconsin-Madison)
11:20-11:40
title Ferroelectric Memory FET with Pt/SrBi2Ta2O9/Hf-Al-O/Si Gate Structure
author(s) Shigeki Sakai, Rajangam Ilangovan, Mitsue Takahashi(National Institute of Advanced Industrial Science and Technology)
11:40-12:00
title Electrical Characteristics of Ferroelectric-Gate Thin Film Transistors using ITO Channel
author(s) Masaru Senoo, Takaaki Miyasako, Eisuke Tokumitsu(Precision and Intelligence Laboratory, Tokyo Institute of Technology)
Lunch (12:00-13:10)
Session 7 (13:10-14:50)
Chairpersons: K. Okada (Matsushita Elec.), J. H. Stathis (IBM)
13:10-13:40 <+>
title Reliability Concerns of Ultra-thin Gate Dielectrics
author(s) Hideki Satake, Takeshi Yamaguchi, Izumi Hirano, Masato Koyama(Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)
13:40-14:10 <+>
title Ultra Thin Oxide Reliability in CMOS Devices and Circuits
author(s) J. H. Stathis(IBM, USA)
14:10-14:30
title Effect of Soft Breakdown in Ultrathin Gate Oxides on CMOS Logic Circuit
author(s) Takuji Hosoi, Shuichi Morikawa, Yoshinari Kamakura, Kenji Taniguchi(Dept. of Electronics & Information Systems, Graduate School of Engineering, Osaka University)
14:30-14:50
title Analysis of Breakdown Phenomena in Stressed Gate SiO2 Films by Conductive Atomic Force Microscopy
author(s) Akiyoshi Seko(Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University), Yukihiko Watanabe(Toyota Central R&D Labs., Inc), Hiroki Kondo, Akira Sakai(Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University), Shigeaki Zaima(Center for Cooperative Research in Advanced Science & Technology, Nagoya University), Yukio Yasuda(Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University)
14:50-15:00 Closing Remarks

Papers (in the Poster Session)

Date/Time:Thursday May 27, 2004/15:50-17:50

[Ultrathin silicon dioxide, oxynitride and oxide-nitride composite dielectrics]

title Enhancement of Si Self-Diffusion by the Existence of B in SiO2
author(s) Masashi Uematsu, Hiroyuki Kageshima, Yasuo Takahashi(NTT Basic Research Laboratories), Shigeto Fukatsu, Kohei M. Itoh(Keio University), Kenji Shiraishi(University of Tsukuba)

title Formation of Silicon Oxynitride Films with Low-Leakage Current by Nitrogen Plasma near Atmospheric Pressure
author(s) Ryoma Hayakawa, Norifumi Fujimura(Department of Applied Materials Science, Graduate School of Engineering, Osaka Prefecture University), Hiroya Kitahata, Motokazu Yuasa(Sekisui Chemical Co., LTD)

title Observation of Thermal Oxidation at Si(001) Surface by Time-Resolved Photoemission Spectroscopy in the Langmuir-type Adsorption Mode
author(s) Akitaka Yoshigoe, Kousuke Moritani(Japan Atomic Energy Research Institute), Syunsuke Hachiue(Kobe university), Yuden Teraoka(Japan Atomic Energy Research Institute)

title Rapid and Uniform SiO2 Film Growth on Large-sized Si Wafer Using 100%-O3 Gas
author(s) Tetsuya Nishiguchi(AIST, meidensha corporation), Yosuke Sato, Hidehiko Nonaka, Shingo Ichimura(AIST), Yoshimasa Nihei(Tokyo University of Science), Tsuyoshi Noyori, Yoshiki Morikawa, Mitsuru Kekura(Meidensha Corporation)

title Initial Stage of Defect Formation Process at Si/SiO2 Interface Detected by in-situ UHV-ESR
author(s) Wataru Futako, Norikazu Mizuochi, Satoshi Yamasaki(Diamond Research Center AIST)

title Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure
author(s) Satoru Morita, Akihito Shinozaki, Yuuki Morita, Kazuo Nishimura, Tatsuya Okazaki, Shinichi Urabe, Mizuho Morita(Department of Precision Science and Technology, Graduate School of Engineering, Osaka University)

title Nonuniformity in Ultrathin SiO2 on Si(111) Characterized by AFM
author(s) Ryu Hasunuma, Junichi Okamoto, Norio Tokuda, Kikuo Yamabe(Institute of Applied Physics, University of Tsukuba)

title Dielectric Leakage Reduction and Improvement of MOSFET Characteristics by Optimizing Anneal Process in Ultra-thin SiON Film
author(s) Masashi Takahashi, Hiroji Ozaki, Hitoshi Takada, Yasuyuki Tamura, Takaoki Sasaki, Hidemi Amai, Fumio Ootsuka, Mitsuo Yasuhira, Tsunetoshi Arikado(Semiconductor Leading Edge Technologies, Inc. / Research Dept.1)

[High-k gate dielectrics]

title Interface Reaction of Poly-Si/high- k Insulator Systems Studied by Hard X-Ray Photoemission Spectroscopy
author(s) Eiji Ikenaga, I. Hirosawa(JASRI/SPring-8), Y. Takata, A. Chainani(RIKEN/Spring-8), H.Kitajima, A.Muto, T.Maeda, K.Torii(Semiconductor Leading Edge Technologies, Inc.), K. Tamasaku, Y. Nishino, T. Ishikawa, S. Shin(RIKEN/Spring-8), S. Komiya, K. Kobayashi(JASRI/SPring-8)

title Effect of Nitrogen on Electrical and Physical Properties of HfSixOy gate dielectrics
author(s) Prakaipetch Punchaipetch, Takeshi Okamoto, Hideki Nakamura, Yukiharu Uraoka, Takashi Fuyuki(Graduate School of Materials Science, Nara Institute of Science and Technology), Sadayoshi Horii(Semiconductor Equipment System Laboratory, Hitachi Kokusai Electric Inc.,)

title Characterisation of Ultra-thin Dielectric Layers Using XPS and ARXPS
author(s) P. Mack, B. McIntosh, R. G. White, J. Wolstenholme(Thermo Electron Corporation)

title Electrical and Thickness Homogeneity of ZrO2 and HfO2 Films Studied by Ultra-High Vacuum Conducting Atomic-Force Microscopy
author(s) Sascha Kremmer, Harald Wurmbauer, Christain Teichert(Institute of Physics, University of Leoben), Grazia Tallarida(Laboratorio MDM - INFM)

title HfO2 Dielectric Film Formation Combined with Radical Nitridation
author(s) Mitsuo Sakashita, Ryoya Takahashi, Akira Sakai, Shigeaki Zaima, Yukio Yasuda(Nagoya University)

title Transient Capacitance in MOS with Gate Stack Dielectrics
author(s) Masakazu Goto, Keiichi Higuchi(Inst. of Appl.Phys., Univ. of Tsukuba), Kazuyoshi Torii(Semiconductor Leading Edge Technologies Inc.), Kikuo Yamabe(Inst. of Appl.Phys., Univ. of Tsukuba and Tsukuba research Center of Interdisciplinary Materials Science, Univ. of Tsukuba)

title Effects of Interlayer and Annealing on Band Diagrams of HfO2 Gate Insulators Studied by Photoemission Spectroscopy
author(s) Satoshi Toyoda, Jun Okabayashi, H. Kumigashira, M. Oshima(Department of Applied Chemistry, The University of Tokyo), M. Niwa, K Usuda, G. L. Liu(Semiconductor Technology Academic Research Center)

title Impact of Rapid Thermal O2-Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)
author(s) A. Ohta, S. Miyazaki, H. Murakami(Department of Electrical Engineering, Graduate School of Advanced Sciences of Matter, Hiroshima University), T. Kawahara, K. Torii(Semiconductor Leading Edge Technologies, Inc.)

[Ferroelectric and high-k films for memory applications]

title Effect of Silicon Addition on the Electrical Properties of SrBi2Ta2O9 Thin Films
author(s) Susumu Tamura , Yasuhisa Omura (Kansai University/High-Technology Research Center and Faculty of Engineering)

title Solid Phase Epitaxial Growth of SrTiO3 Thin Films on Si(001)Substrates at Low Temperature
author(s) M. N. K. Bhuiyan, H. Kimura, T. Tambo, C. Tatsuyama(Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University)

[Growth and processing of gate dielectrics]

title Xe-Lamp-Induced UV Light Irradiation Effects on SiO2 Film Growth during Dry Oxidation
author(s) Koichiro Tatsumi, Norio Imou, Susumu Tamura, Yasuhisa Omura(High-Technology Research Center, Kansai University)

title Structure of Ultrathin Epitaxial CeO2 Films Grown on Si(111)
author(s) Sinji Joumori, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura(Department of Engineering Physics and Mechanics, Kyoto University), Yukie Nishikawa, Daisuke Matsushita, Takeshi Yamaguchi(Advanced LSI Technology Laboratory, Toshiba Corporation), Nobutaka Satou(Toshiba Nanoanalysis Corporation)

[Gate dielectric wearout and reliability]

title Thickness Dependence of Microscopic Current-Voltage Characteristics in Stressed SiO2 Films
author(s) Yukihiko Watanabe(Toyota Central R&D Labs., Inc), Akiyoshi Seko, Hiroki Kondo, Akira Sakai(Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University), Shigeaki Zaima(Center for Cooperative Research in Advanced Science and Technology, Nagoya University), Yukio Yasuda(Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University)

[Characterization and control of gate dielectric/Si interface]

title Oxidation Process Dependence of Strain Fields underneath SiO2/Si(001) interfaces
author(s) Wataru Yashiro(Nanomaterials Laboratory (NML), National Research Institute for Materials Science (NIMS) and Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST)), Kazushi Sumitani, Toshio Takahashi(The Institute for Solid State Physics, The University of Tokyo), Yoshitaka Yoda(Japan Synchrotoron Radiation Research Institute (JASRI)), Kensuke Takahashi, Takeo Hattori(Department of Electrical and Electronic Engineering, Musashi Institute of Technology), Kazushi Miki(Nanomaterials Laboratory (NML), National Research Institute for Materials Science (NIMS) and Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST))

title Effect of Post-Deposition Annealing of Composition and Chemical Structures of La2O 3 film/Si(100) Interfacial Transition Layers
author(s) Tetsushi Yoshida, Takayoshi Shiraishi, Hiroshi Nohira(Musashi Inst. of Tech.), Shun-ichiro Ohmi(Tokyo Inst. of Tech. IGSSE), Youichi Kobayashi, Ng Jin Aun, Hiroshi Iwai(Tokyo Inst. of Tech. FCRC), Wataru Sakai, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura(Kyoto Univ. ), Takeo Hattori(Musashi Inst. of Tech.)

title Angle-resolved XPS Studies on Al2O3/SiON Interface Reaction
author(s) Tetsushi Yoshida, Seiji Shinagawa, Hiroshi Nohira(Musashi Institute of Technology), Shin-ichi Saito(Central Research Laboratory, Hitachi, Ltd.), Masahiko Hiratani(Advanced Research Laboratory, Hitachi, Ltd.), Takeo Hattori(Musashi Institute of Technology)

title Structure Change of Y2O3 and La2O3 Films by Heat Treatment
author(s) Takashi Yamamoto, Yukiko Izumi, Hideki Hashimoto(Toray Research Center Inc. ), Masanori Oosawa(NIPPON SANSO CORPORATION ), Yoshihiro Sugita(Fujitsu Laboratories Ltd.)

title Thermal Stability of Yttrium-Aluminate Alloy Film for Future Gate Dielectric
author(s) Yukiko Izumi, Takashi Yamamoto, Takashi Miyamoto, Kazuyuki Okada, Naoyuki Sugiyama, Hideki Hashimoto(Toray Research Center, Inc.), Minoru Inoue, Masanori Oosawa(NIPPON SANSO CORPORATION), Yoshihiro Sugita(Fujitsu Laboratories Ltd.)

[Theoretical approaches for gate dielectric/Si structure]

title First-Principle Study on Nitridation of Silicon Dioxide and Electronic Properties of Silicon Oxynitride Thin Film
author(s) Hiroki Uehara, Kentaro Doi, Koichi Nakamura, Akitomo Tachibana(Department of Engineering Physics and Mechanics, Kyoto University)